mbr1030ct-mbr1060ct schottky barrier recitifier product summary to-220 plastic-encapsulate transistors features scottky barrier chip guard ring die construction for transient protection low power loss, high efficiency very low forward voltage drop high surge capability high current capability and low forward voltage drop for use in low voltage, high frequency inverters, free wheeling, and polarity protection applications 01 /2 9 /2007 rev.1.00 www.siliconstandard.com 1 peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 30 35 40 45 50 60 v pms reverse voltage v r(rms) 21 24.5 28 31.5 35 42 v average rectified output current (note 1) @ t c =105 i o 10 a non-repetitive peak forward surge current 8.3ms single half sine-wave superimposed on rated load (jedec method) i fsm 125 a repetitive peak reverse surge current @ t 2.0s i rrm 1.0 a forward voltage drop @ i f =5.0a, t c =125 @ i f =5.0a, t c = 25 @ i f =10a, t c = 25 v fm 0.57 0.70 0.84 0.70 0.80 0.95 v peak reverse current @ t c = 25 at rated dc blocking voltage @ t c =125 i rm 0.1 15 ma typical junction capacitance (note 2) c j 150 pf operating and storage temperature range t j , t stg -65 to +150 characteristic symbol mbr 1030ct mbr 1035ct mbr 1040ct mbr 1045ct mbr 1050ct mbr 1060ct unit electrical characteristics ( tamb = 25 o c unless otherwise specified ) pb-free; rohs-compliant notes: 1. thermal resistance junction to case mounted heat sink. 2. measured at 1.omhz and applied reverse voltage of 4.0v dc. 1 2 3 t o - 220 1 . an o d e 2. ca t h ode 3 . an o d e 1 2 3 free datasheet http:///
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